DaON-100I
Ion milling system
[Ion Milling]
GENERAL SPECIFICATION
| Substrate | Max. 4inch single wafer | |
|---|---|---|
| Ultimate pressure | 5x10-6 Torr | |
| Ion-beam source | Source type | Kaufman |
| Beam dia. | 120mm (effective dia.:100mm) | |
| Beam energy | 1.2KeV | |
| Uniformity | Wafer in wafer | ≤±5% |
| Run to run | ≤±5% | |
| Rotation | 0~20rpm | |
| Tilt motion | ± 45° | |
| Ion source power | RF generator | 600W, 13.56MHz |
| Beam power | 1kV, 600mA DC | |
| Accel. Power | 1kV, 600mA DC | |
| Bias power | 600V, 600mA DC | |
| Neutralization |
Filament : AC 30C, 20A Bias: DC 1kV |